Research Update: Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells
Research Update: Relativistic origin of slow electron-hole recombination in hybrid halide perovskite solar cells
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DOI：
10.1063/1.4955028
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发表时间：
2016-09-01
期刊：
影响因子：
6.1
通讯作者：
van Schilfgaarde, Mark
中科院分区：
文献类型：
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作者：
Azarhoosh, Pooya;McKechnie, Scott;van Schilfgaarde, Mark
杂化钙钛矿型CH3NH3PbI3(MAPI)具有较长的少子寿命和扩散长度。结果表明，慢复合起源于自旋分裂的间接能隙。大的内部电场作用于自旋-轨道耦合的能带极值，使能带边缘移动到不等价的波矢，使基本带隙间接。通过对MAPI、CdTe和GaAs准粒子自洽GW近似下的光致发光的描述，我们预测了载流子寿命是光强和温度的函数。在工作条件下，我们发现MAPI中的辐射复合比直接带隙行为减少了350多倍。间接能隙以动态无序的形式保留。(C)2016年作者(S)。
The hybrid perovskite CH3NH3PbI3 (MAPI) exhibits long minority-carrier life-times and diffusion lengths. We show that slow recombination originates from a spin-split indirect-gap. Large internal electric fields act on spin-orbit-coupled band extrema, shifting band-edges to inequivalent wavevectors, making the fundamental gap indirect. From a description of photoluminescence within the quasiparticle self-consistent GW approximation for MAPI, CdTe, and GaAs, we predict carrier lifetime as a function of light intensity and temperature. At operating conditions we find radiative recombination in MAPI is reduced by a factor of more than 350 compared to direct gap behavior. The indirect gap is retained with dynamic disorder. (C) 2016 Author(s).