Photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film and its photoelectric gas-sensing properties
Photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film and its photoelectric gas-sensing properties
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p-Cu2O/n-Cu2O同质结薄膜光生电荷转移过程及其光电气敏性能
DOI：
10.1016/j.jcis.2013.05.059
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发表时间：
2013-09-01
影响因子：
9.9
通讯作者：
Wang, Dejun
中科院分区：
文献类型：
--
作者：
Jiang, Tengfei;Xie, Tengfeng;Wang, Dejun
本研究采用简单的两步电沉积法制备了p-Cu2O/n-Cu2O同质结薄膜。用表面光电压法研究了p-Cu2O/n-Cu2O同质结薄膜的光致电荷转移过程。然后，将p-Cu2O/n-Cu2O同质结薄膜组装成室温下405 nm和532 nm光照下的乙醛光电气敏传感器。在532 nm光照射下，多余的光生电子在界面内建电场的作用下迁移到被照射的n-Cu2O一侧，促进乙醛的脱附，从而导致比405 nm光下更高的灵敏度。研究结果表明，在光电气敏材料中构建结结构是实现常温高灵敏度的有效途径。皇冠版权所有(C)2013由爱思唯尔公司出版。保留所有灯光。
In this study, the p-Cu2O/n-Cu2O homojunction film was prepared by a simple two-step electrodeposition method. The photoinduced charge transfer process in p-Cu2O/n-Cu2O homojunction film was studied using surface photovoltage technique. Then, the p-Cu2O/n-Cu2O homojunction film was assembled into a photoelectric gas sensor for sensing acetaldehyde both under 405 nm and 532 nm light irradiation at room temperature. For 532 nm light irradiation, excess photoinduced electrons migrate to the irradiated n-Cu2O side affected by the interfacial built-in electric field and promote desorption of acetaldehyde, which results in a higher sensitivity than that under 405 nm light. Our results demonstrated that constructing junction structure in photoelectric gas-sensing materials is an effective approach to achieve high sensitivity at room temperature. Crown Copyright (C) 2013 Published by Elsevier Inc. All lights reserved.