Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect
Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect
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DOI：
10.1088/1367-2630/10/8/083038
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发表时间：
2008-08
影响因子：
3.3
通讯作者：
T. Hirahara;K. Miyamoto;A. Kimura;Y. Niinuma;G. Bihlmayer;E. Chulkov;T. Nagao;I. Matsuda;S. Qiao;K. Shimada;H. Namatame;M. Taniguchi;S. Hasegawa
中科院分区：
文献类型：
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作者：
T. Hirahara;K. Miyamoto;A. Kimura;Y. Niinuma;G. Bihlmayer;E. Chulkov;T. Nagao;I. Matsuda;S. Qiao;K. Shimada;H. Namatame;M. Taniguchi;S. Hasegawa
继我们之前的工作（Hirahara T et al 2007 Phys. Rev. B 76 153305）之后，我们在~120 K下对硅衬底上生长的超薄 Bi 薄膜进行了自旋和角度分辨光发射测量，重点关注费米能级附近的分裂表面态能带。我们发现了明确的实验证据，表明这些态在 附近表现出 Rashba 型自旋分裂行为，但分裂在它们与体能带投影重叠的地方附近消失了。这可以解释为从拉什巴效应到奇偶效应的分裂起源的变化，如从头计算所揭示的那样。
Following our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at ∼120 K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state bands near the Fermi level. We found clear experimental evidence that these states show Rashba-type spin-split behavior near , but the splitting is lost near where they overlap with the bulk band projection. This can be explained as a change in the origin of the splitting from a Rashba effect to a parity effect as revealed by ab initio calculations.