Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application
Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application
复制标题
用于剂量测定应用的 NAND 闪存误码分析模型
DOI：
10.1109/tns.2021.3125652
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发表时间：
2022
影响因子：
1.8
通讯作者：
Ray, Biswajit
中科院分区：
文献类型：
--
作者：
Kumari, Preeti;Surendranathan, Umeshwarnath;Wasiolek, Maryla;Hattar, Khalid;Bhat, Narayana;Ray, Biswajit
在本文中，我们提供了一个分析模型，分析了总电离剂量(TID)对商用闪存芯片误码统计的影响。通过对不同工艺节点的几种商用NAND闪存芯片的辐照实验，验证了模型的有效性。我们发现，我们的分析模型可以在较高的TID值[~20kRad(Si)]下从较低的TID值[<；1kRad(Si)]的测量数据中投影比特误差。基于我们的模型和测量数据，我们制定了使用商用闪存芯片作为剂量计的基本设计规则。我们通过详细的实验讨论了NAND芯片间的变异性、噪声容限和固有误差对剂量计设计的影响。
In this article, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values [~20 krad (Si)] from measured data at lower TID values [<1 krad (Si)]. Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin, and the intrinsic errors on the dosimeter design using detailed experimentation.