Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors
Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors
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DOI：
10.1063/1.3424792
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发表时间：
2010-05-03
影响因子：
4
通讯作者：
Sirringhaus, H.
中科院分区：
文献类型：
--
作者：
Caironi, M.;Newman, C.;Sirringhaus, H.
我们证明了一种基于高迁移率聚{[N，N'-双（2-辛基十二烷基）-萘-1,4,5,8-双（二碳酰亚胺）-2,6-二基]-al -5,5'-（2,2'-双噻吩）}的高功函数金属在交错晶体管中的高效电子注入。通道长度缩放表明，当通道长度减小到几微米时，电子的线性迁移率仍然高于0.1 cm(2)/V s。场增强注入有利于在固定的横向电压下减小尺度，并在只有几微米的通道的高栅极电压下将接触电阻降低到11 k ω cm。触点是不对称的，源的贡献占总电阻的主导地位，与注入限制一致，而不是像交错晶体管中一般发现的体积限制。(C) 2010年美国物理研究所。(doi: 10.1063/1.3424792)
We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm(2)/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 k Omega cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors. (C) 2010 American Institute of Physics. [doi:10.1063/1.3424792]