Cu <sub>2</sub> (Sn <sub> 1− <i>x</i> </sub> Ge <sub> <i>x</i> </sub> )S <sub>3</sub> solar cells prepared via co‐evaporation and annealin
Cu
<sub>2</sub>
(Sn
<sub>
1−
<i>x</i>
</sub>
Ge
<sub>
<i>x</i>
</sub>
)S
<sub>3</sub>
solar cells prepared via co‐evaporation and annealin
复制标题
Cu <sub>2</sub> (Sn <sub> 1− <i>x</i> </sub> Ge <sub> <i>x</i> </sub> )S <sub>3 </sub> 通过共蒸发和退火制备太阳能电池
DOI：
10.1002/pssc.201600193
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
H. Araki
中科院分区：
文献类型：
--
作者：
Shohei Sasagawa;Aimi Yago;A. Kanai;H. Araki
采用Cu、Sn和S共蒸发法制备Cu2Sn1−xGexS3 （CTGS）薄膜，并在N2、GeS2和S蒸汽组成的气氛中进行570℃退火。然后将这些薄膜用于制造具有玻璃/Mo/CTGS/CdS/ZnO:Al/Al结构的光伏电池。用略富Cu的CTS （Cu/Sn = 2.07）制备Cu2(Sn0.86Ge0.14)S3薄膜的电池，其转换效率为3.4%，开路电压为0.29 V。基于外量子效率的带隙估计约为1.0 eV。开路电压大于CTS薄膜太阳能电池的开路电压，并随带隙能量的增加而增加。
Cu2Sn1−xGexS3 (CTGS) thin films were prepared by co-evaporation of Cu, Sn, and S to form Cu2SnS3 (CTS) precursors, which were then annealed at 570 °C in an atmosphere composed of N2, GeS2, and S vapor. The films were then used to fabricate photovoltaic cells with the structure glass/Mo/CTGS/CdS/ZnO:Al/Al. A cell with a film composition of Cu2(Sn0.86Ge0.14)S3 fabricated from slightly Cu-rich CTS (Cu/Sn = 2.07) exhibited a conversion efficiency of 3.4% and an open-circuit voltage of 0.29 V. The band gap based on the external quantum efficiency was estimated to be approximately 1.0 eV. The open-circuit voltage was found to be larger than that for a CTS thin film solar cell and increased with band gap energy.