III-V Oxidation: Discoveries and Applications in Vertical-Cavity Surface-Emitting Lasers
III-V Oxidation: Discoveries and Applications in Vertical-Cavity Surface-Emitting Lasers
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DOI：
10.1109/jproc.2013.2274931
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发表时间：
2013-10-01
影响因子：
20.6
通讯作者：
Deppe, Dennis G.
中科院分区：
文献类型：
--
作者：
Dallesasse, John M.;Deppe, Dennis G.
自1989年Dallesasse和Holonyak发现III-V氧化以来，在化合物半导体器件中使用氧化物在技术和商业上都取得了重大进展。折射率和电导率的工艺诱导的修改允许控制光电子系统中的两种信息载体，光子和电子，从而实现广泛的器件应用。具有重要技术和商业意义的是使用氧化来制造高速垂直腔面发射激光器（VCSEL），首先由德克萨斯大学奥斯汀分校（美国德克萨斯州奥斯汀）的Deppe小组实施。在这里，低折射率III-V氧化物与VCSEL内部的光学模式的相互作用产生了增益和场的最佳重叠，使激光器具有超低阈值电流和理想的光束特性。综述了III-V族氧化物的发现、利用氧化物制作光子和电子器件的关键技术里程碑以及在垂直腔面发射激光器中的应用。
Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made, both technically and commercially, on the use of oxides in compound semiconductor devices. The process-induced modification of refractive index and conductivity allows control of the two carriers of information in optoelectronic systems, the photon and the electron, enabling wide-ranging device applications. Of great technical and commercial importance has been the use of oxidation for the fabrication of high-speed vertical-cavity surface-emitting lasers (VCSELs), first implemented by Deppe's group at The University of Texas at Austin (Austin, TX, USA). Here, the low refractive index III-V oxide's interaction with the optical modes inside the VCSEL creates an optimal overlap of gain and field, enabling lasers with ultralow threshold currents and desirable optical beam properties. The discovery of III-V oxidation, key technical milestones in the fabrication of photonic and electronic devices that use oxidation, and the application to VCSELs are reviewed.