An Increased Red Shift in Near-infrared Light Emission from Ge Microbeam Strictures on Si Induced by an Externally Applied Uniaxial Stress
An Increased Red Shift in Near-infrared Light Emission from Ge Microbeam Strictures on Si Induced by an Externally Applied Uniaxial Stress
复制标题
外部施加的单轴应力引起硅上 Ge 微束结构的近红外光发射红移增加
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
Yasuhiko Ishikawa
中科院分区：
文献类型：
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作者：
Tatsuji Kaiwa;Kazumi Wada;Yasuhiko Ishikawa
