Modified model of gate leakage currents in AlGaN/GaN HEMTs
Modified model of gate leakage currents in AlGaN/GaN HEMTs
复制标题
AlGaN/GaN HEMT 栅极漏电流的修正模型
DOI：
10.1088/1674-1056/25/10/107106
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
Shujun Cai
中科院分区：
文献类型：
--
作者：
Xin Tan;Shaobo Dun;Yulong Fang;Shujun Cai
It has been reported that the gate leakage currents are described by the Frenkel–Poole emission (FPE) model, at temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a mod
