Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor
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DOI：
10.1021/acs.nanolett.0c03493
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发表时间：
2020-12-09
期刊：
影响因子：
10.8
通讯作者：
Burch, Kenneth S.
中科院分区：
文献类型：
--
作者：
Wang, Yiping;Balgley, Jesse;Burch, Kenneth S.
二维纳米电子学、等离子体激元学和新兴相需要清洁的局域电荷控制，这就需要层状的晶体受体或供体。我们的拉曼光谱、光电压和电导测量，结合从头算计算，确定了α - RuCl₃的大功函数和窄带能够对剥离的单层和双层石墨烯、化学气相沉积生长的石墨烯和WSe₂以及分子束外延生长的EuS进行调制掺杂。我们进一步展示了原理性光电压器件的证据、通过扭转角的控制以及通过六方氮化硼的电荷转移。短程横向掺杂（
Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of alpha-RuCl3 enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe2, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (