Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern
Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern
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DOI：
10.1088/0022-3727/48/26/265102
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
Nam Han;E. Jung;Min Han;B. Ryu;Kang Bok Ko;Young Jae Park;T. Cuong;Jaehee Cho;Hyunsoo Kim;C. Hong
中科院分区：
文献类型：
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作者：
Nam Han;E. Jung;Min Han;B. Ryu;Kang Bok Ko;Young Jae Park;T. Cuong;Jaehee Cho;Hyunsoo Kim;C. Hong
热管理已成为进一步发展高功率发光二极管（LED）的关键领域，由于所需的高工作电流密度，并导致额外的焦耳热。这种增加的焦耳加热对LED的性能产生负面影响，因为它大大降低了光学性能和寿命。为了解决这个问题，可以插入还原氧化石墨烯（rGO）层作为散热器。在这项研究中，在30至190 °C的不同温度下系统地进行电流-电压和光输出电流测量，以研究嵌入式rGO图案对器件性能的影响。在高温和高工作电流下，相对于传统LED，rGO嵌入式LED的结温（Tj）低23%，外量子效率（EQE）高24%。此外，在-5 V的偏压下，rGO嵌入式LED的热激活能作为温度的函数表现出30%的增强。这表明rGO图案在降低结温方面起着重要作用，并导致高功率GaN基LED结的温度方面的良好性能。
Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current–voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of −5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.