Design and Control of a GaN-Based, 13-Level, Flying Capacitor Multilevel Inverter
Design and Control of a GaN-Based, 13-Level, Flying Capacitor Multilevel Inverter
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DOI：
10.1109/jestpe.2019.2956166
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发表时间：
2020-09-01
影响因子：
5.5
通讯作者：
Pilawa-Podgurski, Robert C. N.
中科院分区：
文献类型：
--
作者：
Barth, Christopher B.;Assem, Pourya;Pilawa-Podgurski, Robert C. N.
多级拓扑是为移动和固定系统实现更高功率密度转换器的一种有吸引力的方法。本文讨论 13 电平飞跨电容器多电平 (FCML) 逆变器的设计和高性能硬件实现。提供了针对交流输出电压（针对任意级别 FCML）的飞跨电容器尺寸的推导。该硬件原型采用 800Vdc 总线运行，采用额定电压为 100V 的开关模块。此外，通过使用氮化镓 (GaN) FET 和开发定制集成开关单元可实现 120kHz 开关频率，从而降低换向环路电感并允许模块化设计。 FCML 逆变器的倍频效应允许逆变器的输出电感器做得非常小 (4.7 μH)，同时由于 1.44 MHz 的有效电感器纹波频率而保持 0.7% 的总谐波失真 (THD)。
Multilevel topologies are an appealing method to achieve higher power density converters for both mobile and stationary systems. This article discusses the design and high-performance hardware implementation of a 13-level, flying capacitor multilevel (FCML) inverter. Derivation of flying capacitor sizing for ac output voltages (for an arbitrary level FCML) is provided. Operating from an 800-Vdc bus, this hardware prototype utilizes switch modules with 100-V rating. Moreover, a 120-kHz switching frequency is enabled through the use of gallium nitride (GaN) FETs and the development of custom-integrated switching cells, which reduce commutation loop inductance and allow for a modular design. The frequency multiplication effect of FCML inverters allows the output inductor of the inverter to be made exceptionally small (4.7 mu H) while maintaining a 0.7% total harmonic distortion (THD) due to the 1.44-MHz effective inductor ripple frequency.