Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
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在碳化硅上生长的毫瓦功率深紫外发光二极管
DOI：
10.1143/jjap.44.l502
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发表时间：
2005
影响因子：
1.5
通讯作者：
D. Emerson
中科院分区：
文献类型：
--
作者：
C. Moe;H. Masui;M. Schmidt;Likun Shen;B. Moran;S. Newman;K. Vampola;T. Mates;S. Keller;J. Speck;S. Denbaars;Christian Hussel;D. Emerson
采用金属有机化学气相沉积方法在（0001）碳化硅上生长出峰值波长为275 nm的深紫外发光二极管结构。尽管碳化硅具有很强的紫外光吸收能力，但由于其更好的导热性和垂直导电器件的潜力，碳化硅被选为衬底而不是蓝宝石。在单器件片上测试中，在300 mA直流下的输出功率为0.11 mW，而在1.3 A下，由5个器件封装的硅封装阵列的输出功率为2.09 mW。在20 mA时获得低至4.9 V的正向电压。在p-AlGaN阻断层中，Cp2Mg的注入分布有助于抑制非期望波长的发射，并实现峰缺陷能级比大于100的目标。
Deep ultraviolet light emitting diode structures with a peak wavelength of 275 nm were grown by metalorganic chemical vapor deposition on (0001) silicon carbide. Despite its strong ultraviolet light absorption, silicon carbide was chosen as a substrate rather than sapphire for its improved thermal conductivity and the potential for vertically conducting devices. An output power of 0.11 mW was observed at 300 mA DC during single device on-wafer testing, and output powers of 2.09 mW at 1.3 A were obtained from a packaged, silicone encapsulated array of five devices. Forward voltages as low as 4.9 V at 20 mA were obtained. The injection profile of Cp2Mg during the p-AlGaN blocking layer was instrumental in the suppression of emission at undesired wavelengths and the realization of peak-to-defect level ratios greater than 100.