C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties
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DOI：
10.1002/adma.201605625
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发表时间：
2017-04-25
影响因子：
29.4
通讯作者：
Jiang, Mianheng
中科院分区：
文献类型：
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作者：
Yang, Siwei;Li, Wei;Jiang, Mianheng
由于石墨烯具有非凡的性能和由此产生的众多可能的应用，因此它已开始对二维晶体材料进行深入的研究。在此，作者报告了 C3N（石墨烯的二维结晶、无孔延伸）的可控大规模合成、其结构表征及其一些独特性质。 C3N 由 2,3-二氨基吩嗪聚合而成。它由具有均匀分布的氮原子的二维蜂窝晶格组成，其中 N 和 C 原子均表现出 D-6h 对称性。 C3N 是一种间接带隙为 0.39 eV 的半导体，可以通过制造不同直径的量子点来调整以覆盖整个可见光范围。由单层C3N制成的背栅场效应晶体管的开关电流比达到5.5 x 10(10)。令人惊讶的是，C3N 在低温下表现出铁磁有序（
Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by poly-merization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D-6h-symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3N display an on-off current ratio reaching 5.5 x 10(10). Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (