Enhanced photovoltaic properties for rear passivated crystalline silicon solar cells by fabricating boron doped local back surface field
Enhanced photovoltaic properties for rear passivated crystalline silicon solar cells by fabricating boron doped local back surface field
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DOI：
10.1007/s11595-017-1748-x
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发表时间：
2017-12
期刊：
影响因子：
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通讯作者：
N. Chen;Shuiliang Shen;G. Du
中科院分区：
文献类型：
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作者：
N. Chen;Shuiliang Shen;G. Du
为了提高LBSF中的p型掺杂浓度，在铝浆中加入硼，成功制备了硼掺杂的局域背场（B-LBSF）。通过在LBSF中掺杂硼，观察到B-LBSF的掺杂浓度比Al-LBSF高得多。预期LBSF中的较高掺杂浓度导致较好的背面钝化和较低的背面接触电阻。基于每种类型的1000片太阳能电池，发现具有B-LBSF的背面钝化晶体硅太阳能电池的光伏特性比具有Al-LBSF的背面钝化晶体硅太阳能电池的光伏特性有统计学改善。
In order to enhance thep-type doping concentration in the LBSF, boron was added into the aluminum paste and boron doped local back surface field (B-LBSF) was successfully fabricated in this work. Through boron doping in the LBSF, much higher doping concentration was observed for the B-LBSF over the Al-LBSF. Higher doping concentration in the LBSF is expected to lead to better rear passivation and lower rear contact resistance. Based on one thousand pieces of solar cells for each type, it was found that the rear passivated crystalline silicon solar cells with B-LBSF showed statistical improvement in their photovoltaic properties over those with Al-LBSF.