Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors
Effects of post-annealing on the dielectric properties of Au/BaTiO3/Pt thin film capacitors
复制标题
后退火对Au/BaTiO3/Pt薄膜电容器介电性能的影响
DOI:
10.1016/j.matlet.2003.10.047
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发表时间:
2004
影响因子:
3
通讯作者:
J. Varela
中科院分区:
文献类型:
--
作者:
Ejh Lee;F. Pontes;E. Leite;E. Longo;R. Magnani;P. S. Pizani;J. Varela
Barium titanate thin films were prepared by the polymeric precursor method and deposited onto Pt/Ti/SiO2/Si substrates. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR) and micro-Raman spectroscopy were used to investigate the formation of the BaTiO3perovskite phase. Afterwards, the films were submitted to post-annealing treatments in oxygen and nitrogen atmospheres at 300 °C for 2 h, and had their dielectric properties measured. It was observed that the electric properties of the thin films are very sensitive to the nature of the post-annealing atmosphere. This study demonstrates that post-annealing in an oxygen atmosphere increases the dielectric relaxation phenomenon and that post-annealing in a nitrogen atmosphere produces a slight dielectric relaxation.