The form of the defect clusters produced in copper by Cu+ ion irradiation
The form of the defect clusters produced in copper by Cu+ ion irradiation
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Cu离子辐照在铜中产生的缺陷簇的形态
DOI：
10.1080/14786437208229317
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发表时间：
1972
期刊：
影响因子：
--
通讯作者：
P. Hirsch
中科院分区：
文献类型：
--
作者：
M. Wilson;P. Hirsch
本文用电子显微镜研究了Cu ~+离子对铜的损伤。30 kev和90 kev的Cu+离子产生的点缺陷团簇具有基于空位型Frank固着环的结构，Burgers矢量为a/3 π 111 π。有证据表明，根据Silcox和Hirsch（1959）提出的机制，许多环的部分圆周被解离成阶梯-棒位错和肖克利偏位错。这种解离在{111}平面上产生堆垛层错区域，而不是在环平面上，并且在三角形环的情况下可以产生堆垛层错四面体，尽管在Cu+离子损伤的铜中没有观察到这种缺陷。
Abstract A detailed electron microscope study has been made of the damage produced in copper by Cu+ ions. 30 kev and 90 kev Cu+ ions give rise to point defect clusters having a structure based on the vacancy type Frank sessile loop with Burgers vectors a/3〈111〉 there is evidence that parts of the circumference of many loops are dissociated into stair-rod dislocations and Shockley partials according to a mechanism proposed by Silcox and Hirsch (1959). This dissociation gives rise to areas of stacking fault on {111} planes other than that of the loop plane, and in the case of a triangular loop can produce a stacking-fault tetrahedron, though such defects have not been observed in Cu+ ion damaged copper.