Study of Induced Magnetic Anisotropy by Lattice Distortion in Cobalt Ferrite Thin Film Grown on (Mg,Sn)3O4 Buffer Layers
Study of Induced Magnetic Anisotropy by Lattice Distortion in Cobalt Ferrite Thin Film Grown on (Mg,Sn)3O4 Buffer Layers
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(Mg,Sn)3O4 缓冲层上生长的钴铁氧体薄膜中晶格畸变引起的磁各向异性研究
DOI：
10.1109/tmag.2019.2962025
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发表时间：
2020
影响因子：
2.1
通讯作者：
Yanagihara H.
中科院分区：
文献类型：
--
作者：
Onoda H.;Sukegawa H.;Yanagihara H.
研究了在（Mg，Sn）3 O 4（MSO）缓冲层上用射频磁控溅射法生长的钴铁氧体（CFO）（001）外延薄膜的结构和磁性，通过磁弹效应诱导出大的垂直磁各向异性（PMA）.通过改变CFO的膜厚，证明了CFO失真的调谐。扭矩测量表明，5 nm厚的CFO薄膜在室温下显示PMA常数Ku= 25.8±1.3 Merg/cm 3，这对于铁磁氧化物来说是非常大的。
We have investigated structural and magnetic properties of cobalt ferrite (CFO)(001) epitaxial thin films grown by RF magnetron sputtering method on (Mg,Sn)3O4(MSO) buffer layers to induce large perpendicular magnetic anisotropy (PMA) through the magneto-elastic effect. Tuning of the CFO distortion was demonstrated by changing the film thickness of CFO. Torque measurements revealed that a 5-nm thick CFO thin film showed the PMA constant Ku= 25.8±1.3 Merg/cm3at room temperature, which is extraordinarily large for a ferromagnetic oxide.