Wannier-Stark Effects in Semiconductor Superlattices
Wannier-Stark Effects in Semiconductor Superlattices
复制标题
半导体超晶格中的万尼尔-斯塔克效应
DOI：
10.1051/anphys:199706001
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发表时间：
1997
影响因子：
--
通讯作者：
P. Voisin
中科院分区：
文献类型：
--
作者：
P. Voisin
施加平行于超晶格生长轴的外电场，可以将与能带色散相关的能量连续体量子化为分立能级的斯塔克阶梯，并将扩展的布洛赫波转换为强局域波函数。这些Wannier-Stark效应被半导体超晶格的显著电光特性清楚地证明。本文综述了这一课题的理论和实验研究进展。
The application of an external electric field parallel to the growth axis of a superlattice quantizes the energy continuum associated with the miniband dispersion into a Stark ladder of discrete energy levels, and transforms the extended Bloch waves into strongly localized wave functions. These Wannier-Stark effects are clearly evidenced by the remarkable electro-optical properties of semiconductor superlattices. We review recent theoretical and experimental developments of this subject.