Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique
Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique
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DOI：
10.1103/physrevb.72.121203
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发表时间：
2005-09-01
影响因子：
3.7
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Hu, CY;Morita, K;Ohno, H
利用时间分辨克尔旋转技术研究了Mg掺杂纤锌矿GaN中空穴的相干自旋动力学。我们观察到自旋相干时间为120 ps的空穴的自旋进动，这是区别于电子的Si掺杂的n-GaN中的结果进行比较。孔的g因子各向异性被确定为g（垂直于）（h）=2.17 +/- 0.03和g（平行于）（h）=2.27 +/- 0.03。我们确定所涉及的空穴位于纤锌矿GaN的价带B（上γ（7））中。
The coherent spin dynamics of holes in Mg-doped (p-type) wurtzite GaN is studied by time-resolved Kerr rotation technique. We observe the spin precession of holes with the spin coherence time of 120 ps, which is distinguished from that of electrons by comparison with the results in Si-doped n-GaN. The g factor anisotropy of holes is determined to be g(perpendicular to)(h)=2.17 +/- 0.03 and g(parallel to)(h)=2.27 +/- 0.03. We identify that the involved holes are in the valence band B (upper Gamma(7)) of wurtzite GaN.