Current–voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure
Current–voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure
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DOI：
10.1063/1.4845495
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发表时间：
2013-12
影响因子：
3.2
通讯作者：
Jing Wen;Xitian Zhang;Hong Gao;Mingjia Wang
中科院分区：
文献类型：
--
作者：
Jing Wen;Xitian Zhang;Hong Gao;Mingjia Wang
We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the c...
