Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate
Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate
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DOI：
10.1063/1.4802088
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发表时间：
2013-04-15
影响因子：
4
通讯作者：
Schmidt, O. G.
中科院分区：
文献类型：
--
作者：
Huo, Y. H.;Rastelli, A.;Schmidt, O. G.
通过在AlGaAs纳米孔中填充GaAs，在（001）GaAs衬底上制备了可控的GaAs/AlGaAs量子点。对于最对称的量子点，我们测量的平均激子精细结构分裂（FSS）的只有（3.9 +/- 1.8）μ eV。两条亮激子复合线的FSS和偏振方向直接反映了量子点的对称性。由于FSS与激子复合的典型均匀线宽相当，这些无应变的GaAs/AlGaAs量子点可能会提供一个实用的平台，在未来的量子器件中产生纠缠光子。(C)2013 AIP Publishing LLC [http：//dx.doi.org/10.1063/1.4802088]
We prepare symmetry-controlled GaAs/AlGaAs quantum dots (QDs) on (001) GaAs substrates by infilling GaAs into AlGaAs nanoholes. For the most symmetric QDs, we measure an average excitonic fine structure splitting (FSS) of only (3.9 +/- 1.8) mu eV. The FSS and polarization direction of the two bright excitonic recombination lines directly reflect the degree of the QD symmetry. Since the FSS is comparable to typical homogeneous linewidths of excitonic recombination, these strain-free GaAs/AlGaAs QDs might offer a practical platform to generate entangled photons in future quantum devices. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802088]