M.Saitoh, T.Hiramoto: "Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance"Journal of Applied Physics. Vol.91, No.10. 6725-6728 (2002)

M.Saitoh, T.Hiramoto: "Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance"Journal of Applied Physics. Vol.91, No.10. 6725-6728 (2002)
复制标题

M.Saitoh、T.Hiramoto:“由于低寄生串联电阻的硅单电子晶体管中的大量子能级间距而导致的电流阶梯的观察”应用物理学杂志。

DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
--
中科院分区:
--
文献类型:
--
作者:

文献摘要

相似文献