Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation
Atomic layer deposition of ruthenium using an ABC-type process: Role of oxygen exposure during nucleation
复制标题
使用 ABC 型工艺进行钌原子层沉积：成核过程中氧气暴露的作用
DOI：
10.1116/6.0000434
复制
发表时间：
2020
影响因子：
2.9
通讯作者：
A. Mackus
中科院分区：
文献类型：
--
作者：
Sonali N. Chopra;M. Vos;M. Verheijen;J. Ekerdt;W. Kessels;A. Mackus
钌的原子层沉积（ALD）在纳米电子学中的各种应用引起了人们的兴趣，并因其在未来技术节点的互连技术中的潜在作用而受到关注。这项工作为O2脉冲时间对SiO2薄膜成核和由此产生的材料性能的影响提供了见解。采用乙苯（1,3-丁二烯）Ru(0)前驱体、O2气体和H2气体脉冲组成的三步ALD工艺沉积Ru薄膜。结果表明，在常规的两步工艺中加入H2脉冲可以使O2脉冲形成的RuOx变为金属Ru。这为使用更长的O2脉冲提供了机会，这增强了成核，导致更快的生长起始和光滑的薄膜。利用该工艺，在225°C、低氧杂质水平（<4 at. %）、电阻率为26±2 μΩ cm的条件下沉积了Ru膜。数据表明，在成核阶段达到饱和所需的加药时间可能与稳定生长阶段所需的条件有很大的偏差。
Atomic layer deposition (ALD) of ruthenium is of interest for various applications in nanoelectronics and is currently gaining attention for its potential role in interconnect technology in future technology nodes. This work provides insights into the influence of the O2 pulse time on the film nucleation on SiO2 and on the resulting material properties. Ru thin films were deposited using a three-step ALD process consisting of ethylbenzene(1,3-butadiene)Ru(0) precursor, O2 gas, and H2 gas pulses. It is shown that the addition of an H2 pulse to a conventional two-step process reduces any RuOx formed during the O2 pulse to metallic Ru. This provides the opportunity to employ longer O2 pulses, which enhances nucleation, leading to faster growth initiation and smooth films. Using this process, the deposition of Ru films at 225 °C with a low oxygen impurity level (<4 at. %) and a resistivity of 26 ± 2 μΩ cm is demonstrated. The data illustrate that the dosing time required for saturation during the nucleation phase can substantially deviate from the conditions required for the steady-growth phase.