Plasma-free nitrogen doping and homojunction light-emitting diodes based on ZnO

Plasma-free nitrogen doping and homojunction light-emitting diodes based on ZnO
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DOI：
10.1088/0022-3727/41/16/165104
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发表时间：
2008-07
期刊：
Journal of Physics D: Applied Physics
影响因子：
--
通讯作者：
Y. Zeng;Z. Ye;Y. F. Lu;W. Z. Xu;L. Zhu;J. Huang;H. P. He;B. Zhao
Y. Zeng;Z. Ye;Y. F. Lu;W. Z. Xu;L. Zhu;J. Huang;H. P. He;B. Zhao
中科院分区：
其他
文献类型：
--
作者：
Y. Zeng;Z. Ye;Y. F. Lu;W. Z. Xu;L. Zhu;J. Huang;H. P. He;B. Zhao

文献摘要

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提出了一种无等离子体金属有机化学气相沉积生长N掺杂p型氧化锌薄膜的方法。X-射线光电子能谱很好地证实了N受体的加入以及相应的费米能级的变化。依赖温度的光致发光揭示了与受主相关的发射，即中性受主结合激子和可能的施主-受主对跃迁。此外，还展示了典型的整流I-V特性和氧化锌同质结发光二极管的室温电致发光。
The authors develop a plasma-free metalorganic chemical vapour deposition method to grow N-doped p-type ZnO films. The incorporation of the N acceptor and the corresponding change in the Fermi level are well confirmed by x-ray photoelectron spectroscopy. Temperature-dependent photoluminescence reveals the acceptor-related emissions, namely, neutral acceptor-bound exciton and probably donor–acceptor pair transition. In addition, typical rectifying I–V characteristics and room-temperature electroluminescence from ZnO homojunction light-emitting diodes are demonstrated.