Micromirror arrays using KOH:H2O micromachining of silicon for lens templates, geodesic lenses, and other applications

Micromirror arrays using KOH:H2O micromachining of silicon for lens templates, geodesic lenses, and other applications
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DOI:
10.1117/12.179881
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发表时间:
1994-11
影响因子:
1.3
通讯作者:
D. L. Kendall;W. Eaton;R. Manginell;T. Digges
D. L. Kendall;W. Eaton;R. Manginell;T. Digges
中科院分区:
工程技术4区
文献类型:
--
作者:
D. L. Kendall;W. Eaton;R. Manginell;T. Digges

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在KOH:H[sub 2]O中,用湿化学腐蚀法在(100)硅上制备了直径从几微米到几毫米的微镜。f/[数字符号]的范围从大约2.5到至少10。直径为550 μ m、矢高为9.6 μ m的蚀刻镜的微粗糙度小于5 nm,其表面形状在0.5 μ m以内。在广泛的直径范围内的数据,并开发了一个半经验模型来解释的行为。所有直径的反射镜的归一化蚀刻轮廓的一致性表明,蚀刻是由表面反应,而不是扩散限制为主。设计和制造方案,使广泛的反射镜直径和焦距,为单微镜和阵列。蚀刻的凹陷可以用作微透镜的模板和用作测地线波导透镜和阵列的衬底。在蚀刻结构上的化学机械抛光减小了边缘曲率并产生扁球形表面,这两者都应改善测地线透镜行为。蚀刻的结构也可以用作可变的晶体取向衬底的外延成核和各种表面分析研究。
Micromirrors having diameters from a few micrometers to several millimeters have been produced on (100) silicon by wet-chemical etching in KOH:H[sub 2]O. The f/[number sign]'s range from about 2.5 to at least 10. The microroughness of an etched mirror with diameter 550 [mu]m and 9.6-[mu]m sagitta is less than 5 nm and its surface figure is within 0.5 [mu]m of a perfect sphere. Data over a wide range of diameters are presented and a semiempirical model is developed to explain the behavior. The concordance of the normalized etched profiles for all diameter mirrors demonstrates that the etching is dominated by surface reaction rather than diffusion limitation. Design and fabrication schemes are presented for making a wide range of mirror diameters and focal lengths, for both single micromirrors and arrays. The etched depressions can be used as templates for microlenses and as substrates for geodesic waveguide lenses and arrays. Chem-mechanical polishing on the etched structures reduces the edge curvature and produces oblate spheroidal surfaces, both of which should improve geodesic lens behavior. The etched structures can also be used as variable crystal orientation substrates for epitaxial nucleation and various surface analysis studies.