Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs
Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube FETs
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寄生和屏蔽效应对隧道碳纳米管 FET 高频/射频性能的分析和影响
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. Banerjee
中科院分区：
文献类型：
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作者：
C. Kshirsagar;Mohamed N. El;K. Banerjee
固有电容和寄生电容在决定器件的高频射频性能方面发挥着重要作用。最近，一种基于隧道原理的新型碳纳米管场效应晶体管（CNFET）被提出，该晶体管表现出令人印象深刻的器件性能，并克服了先前提出的 CNFET 器件的一些局限性。尽管到目前为止，基于碳纳米管的器件已经针对直流性能进行了优化，但在针对高频操作进行优化方面却做得很少。在本文中，我们提出了基于器件几何结构的隧道碳纳米管场效应晶体管（T-CNFET）的固有电容和寄生电容的详细建模和分析，该晶体管具有单纳米管以及基于纳米管阵列的通道。基于该模型，我们分析了 T-CNFET 两种不同缩放场景的寄生电容随器件几何形状的缩放。我们表明，为了减少寄生电容的影响，必须优化纳米管密度。此外，我们首次分析了影响背栅T-CNFET高频/射频性能的各种因素，并研究了寄生效应和屏蔽效应对这些器件高频/射频性能的影响。
Intrinsic and parasitic capacitances play an important role in determining the high-frequency RF performance of devices. Recently, a new type of carbon nanotube field effect transistor (CNFET) based on tunneling principle has been proposed, which shows impressive device properties and overcomes some of the limitations of previously proposed CNFET devices. Although carbon nanotube based devices have been optimized for DC performance so far, little has been done to optimize them for high-frequency operation. In this paper, we present, detailed modeling and analysis of device geometry based intrinsic and parasitic capacitances of tunneling carbon nanotube field effect transistors (T-CNFETs) with both single nanotube as well as nanotube-array based channel. Based on the model, we analyze scaling of parasitic capacitances with device geometry for two different scaling scenarios of T-CNFETs. We show that in order to reduce the impact of parasitic capacitance, nanotube density has to be optimized. Furthermore, for the first time, we analyze various factors affecting the high-frequency/RF performance of back gated T-CNFETs and study the impact of parasitic and screening effects on the high-frequency/RF performance of these devices.