A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
复制标题
描述超薄氧化物本征氧化物击穿统计的新分析模型
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
H. Maes
中科院分区：
文献类型：
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作者：
R. Degreave;P. Roussel;Guido Groeseneken;H. Maes
薄栅氧化层的退化被描述为电子陷阱的连续产生，直到达到临界电子陷阱密度，对应于击穿路径的形成，这个过程被统计描述，导致本征威布尔分布作为陷阱密度的函数的解析表达式。可以得出结论，分布的斜率随着氧化层厚度的增加而增加，因为形成击穿路径所需的陷阱数量增加。此外，临界电子陷阱密度随着氧化层厚度的增加而增加，因为较长的路径具有较低的概率被良好地定向而导致击穿。
The degradation of thin gate oxide is described as the continuous generation of electron traps, until a critical electron trap density is reached, corresponding to the formation of a breakdown path. This process is described statistically resulting in an analytic expression of the intrinsic Weibull distribution as a function of trap density. It can be concluded that the slope of the distribution increases with increasing oxide thickness, because an increasing number of traps is required to form the breakdown path. Also, the critical electron trap density increases with oxide thickness because longer paths have a lower probability of being well oriented to cause breakdown.