Mobile space charge effects on Terahertz properties of Wz-GaN based double drift IMPATT oscillators
Mobile space charge effects on Terahertz properties of Wz-GaN based double drift IMPATT oscillators
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发表时间：
2009-12
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通讯作者：
M. Mukherjee;Soumen Banerjee;J. Banerjee
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作者：
M. Mukherjee;Soumen Banerjee;J. Banerjee
研究了移动空间电荷对太赫兹频段DDRp+pnn+纤锌矿GaN Inpatt二极管高频特性和性能的影响。这些研究是基于作者开发的建模和计算机仿真方法。在太赫兹频段，基于GaN的DDR注入的高频特性在文献中是不存在的。模拟研究表明，在偏置电流密度为2×107am−2的情况下，这些器件在0.30太赫兹频率下的转换效率为12.3%。本文的设计结果对实现纤锌矿GaN太赫兹IMPATT的实验工作具有一定的参考价值。
The effect of mobile space charge on the high frequency properties and performance of DDR p+ p n n+ Wurtzite GaN Impatt diodes at Terahertz frequency has been investigated. The studies are based on modeling and computer simulation method developed by the authors. The high frequency properties of DDR Impatts based on GaN at Terahertz frequency regime are not available in the literature. It is observed from simulation studies that these devices are capable of delivering high RF power with a conversion efficiency of 12.3% at 0.30 Terahertz at a bias current density of 2×107 Am−2. The design results presented in this paper will be useful for experimental work in realizing Wurtzite GaN IMPATTs for operation at Terahertz region.