Characteristics of CA Resist in EUV Lithography
Characteristics of CA Resist in EUV Lithography
复制标题
EUV光刻中CA抗蚀剂的特性
DOI：
10.2494/photopolymer.15.361
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发表时间：
2002
影响因子：
0.8
通讯作者：
H. Kinoshita
中科院分区：
文献类型：
--
作者：
K. Hamamoto;Takeo Watanabe;H. Hada;H. Komano;H. Kinoshita
根据NewSUBARU设备中采用由三非球面镜组成的还原光学系统的EUVL实验室工具（ETS-1）对掩模和晶圆的同步扫描，成功地在60nm的线和10mm×10mm的曝光区域中形成了空间图案。比较KrF和EB的正色调光刻胶的曝光特性结果，KrF化学放大型光刻胶比EB化学放大型光刻胶具有更好的特性。在KrF光刻胶的基础上，将推进分辨率性能和灵敏度良好、脱气量低的适用于EUVL的光刻胶的开发。
According to the synchronous scanning of the mask and wafer with EUVL laboratory tool (ETS-1) with reduction optical system which consisted of three-aspherical-mirror in the NewSUBARU facilities succeeded in the line of 60nm and the space pattern formation in the exposure region of 10mm×10mm.Comparing the result of exposure characteristics for positive-tone resist for KrF and EB, KrF chemically amplified resist has better characteristics than EB chemically amplified resist. The development of suitable resist for EUVL that the resolution performance and sensitivity are good, and the amount of outgassing is low will be advanced based on KrF resist.