Modeling of thermal conductivity in high performing thermoelectric materials
Modeling of thermal conductivity in high performing thermoelectric materials
复制标题
高性能热电材料的热导率建模
DOI：
10.1088/1742-6596/785/1/012004
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
K. Paraskevopoulos
中科院分区：
文献类型：
--
作者：
E. Hatzikraniotis;T. Kyratsi;K. Paraskevopoulos
提出了Mg 2Si-Mg 2Sn基赝二元系的增强的TE性能，这归因于低的热导率。Sn-Si合金化，由于质量波动而降低晶格热导率。此外，Sn-Si替代中的可熔性间隙导致形成具有富Si相和富Sn相的复合材料，其跨度从mm到nm尺度，并且这些纳米夹杂物进一步降低晶格热导率。
The enhanced TE-performance in Mg2Si-Mg2Sn based pseudo-binaries is presented, which is attributed to low thermal conductivity. Sn-Si alloying, reduces the lattice thermal conductivity due to mass fluctuation. Furthermore, miscibility gap in the Sn-Si substitution causes the formation of composites, with Si-rich and Sn-rich phases, which span from mm to nm scale, and these nano-inclusions reduce further lattice thermal conductivity.