Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films
Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films
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DOI：
10.1063/1.1629372
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发表时间：
2003-11
影响因子：
4
通讯作者：
S. T. Zhang;X. Zhang;Hong-Wei Cheng;Yan-feng Chen;Zu-liang Liu;N. Ming;Xiaobo Hu;Jun Wang
中科院分区：
文献类型：
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作者：
S. T. Zhang;X. Zhang;Hong-Wei Cheng;Yan-feng Chen;Zu-liang Liu;N. Ming;Xiaobo Hu;Jun Wang
采用脉冲激光沉积法在（001）-LaNiO 3涂层的（001）LaAlO 3衬底上制备了高质量的c轴外延Bi 4 Ti 3 O 12（BTO）和Nd掺杂的BTO Bi3.15Nd0.85Ti3O12（BNT）铁电薄膜。通过X射线衍射（包括θ-2θ和φ扫描）确定了外延取向。与BTO薄膜相比，BNT薄膜具有显著改善的电性能，具有约2倍大的反射极化，0.6倍低的矫顽场，更好的抗疲劳特性，和1.7倍大的介电常数。实验结果表明，Nd掺杂可以提高BTO的c轴电学性能。讨论了BNT薄膜性能提高的原因。
High-quality c-axis epitaxial ferroelectric thin films of Bi4Ti3O12 (BTO) and Nd-substituted BTO, Bi3.15Nd0.85Ti3O12 (BNT), were prepared on (001)-LaNiO3-coated (001) LaAlO3 substrates by pulsed-laser deposition. The epitaxial alignments were established by the x-ray diffraction, including θ–2θ and φ scans. Compared to the BTO films, the BNT films have significantly improved electrical properties with about 2 times larger remanent polarization, 0.6 times lower coercive field, better fatigue-resisting characteristics, and 1.7 times larger dielectric constant. These results showed experimentally that Nd substitution could enhance the c-axis electrical properties of BTO. The reason for the improved properties of BNT films was discussed.