COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY ION IRRADIATION
COMPLETE RECRYSTALLIZATION OF AMORPHOUS-SILICON CARBIDE LAYERS BY ION IRRADIATION
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DOI：
10.1063/1.114766
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发表时间：
1995-10-02
影响因子：
4
通讯作者：
STOEMENOS, J
中科院分区：
文献类型：
--
作者：
HEERA, V;KOGLER, R;STOEMENOS, J
在500和1050 ℃的温度下，通过横截面透射电子显微镜和卢瑟福背散射光谱和沟道效应研究了离子束诱导的单晶碳化硅衬底（6 H-SiC）上非晶表面层的再结晶。它示出，离子辐照基本上降低了起始温度的外延层再生长和随机成核的晶粒。发现了两种再结晶机制：在500 ℃时，离子束诱导的晶粒无规成核（IBIRN）与离子束诱导的外延结晶（IBIEC）竞争，多晶材料在早期阶段阻止了外延再生长前沿。在1050摄氏度的温度下，IBIEC在IBIRN上占主导地位，并且获得完整但受干扰的外延再生长。(C)1995年美国物理学会。
Ion-beam-induced recrystallization of amorphous surface layers on single-crystalline silicon carbide substrates (6H-SiC) has been investigated at temperatures of 500 and 1050 degrees C by cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry and channeling. It is shown, that ion irradiation substantially reduces the onset temperature of both the epitaxial layer regrowth and the random nucleation of crystalline grains. Two recrystallization regimes have been found. At 500 degrees C ion-beam-induced random nucleation (IBIRN) of crystalline grains strongly competes with ion-beam-induced epitaxial crystallization (IBIEC) and polycrystalline material stops the epitaxial regrowth front in an early stage. At a temperature of 1050 degrees C IBIEC dominates over IBIRN and a complete, but disturbed epitaxial regrowth is obtained. (C) 1995 American Institute of Physics.