100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam
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DOI：
10.1038/nphoton.2010.220
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发表时间：
2010-11-01
期刊：
影响因子：
35
通讯作者：
Kawakami, Yoichi
中科院分区：
文献类型：
--
作者：
Oto, Takao;Banal, Ryan G.;Kawakami, Yoichi
目前以准分子和汞灯代表的紫外线源用于各种应用，包括水纯化/灭菌，生物技术，光刻和表面修饰。但是，它们具有有限的可移植性，低排放效率和有害成分的缺点。因此，找到紧凑，高效且环保的替代紫外线光源具有相当大的技术兴趣。基于二硝酸铝的半导体作为此目的表现出作为材料的希望（1-13），但是由于控制电子电导率的困难，在发光二极管中受到较低的外部量子效率的阻碍。在这里，我们使用电子梁泵送技术，证明了100 mW的输出，创纪录的功率效率与Al（X）GA（1-X）N/Aln量子井相似，以与240 nm相似。这一成就归因于高质量量子井中的载体限制，以及电子束泵送样品结构的适当设计，并且可能是实现具有巨大生态和经济利益的下一代紫外线光源的道路。
Ultraviolet light sources, represented by excimer and mercury lamps, are currently used for various applications, including water purification/sterilization, biotechnology, photolithography and surface modification. However, they have the disadvantages of limited portability, low emission efficiency and the presence of harmful constituents. Finding a compact, efficient and environmentally friendly alternative ultraviolet light source is therefore of considerable technological interest. Aluminium-nitride-based semiconductors show promise as materials for this purpose(1-13), but because of difficulties in controlling electronic conductivity, in light-emitting diodes are hampered by low external quantum efficiencies. Here, we use an electron-beam pumping technique, demonstrating an output of 100 mW and a record power efficiency of similar to 40% from Al(x)Ga(1-x)N/AlN quantum wells emitting at similar to 240 nm. This achievement is attributed to carrier confinement within the high-quality quantum wells, as well as the appropriate design of sample structures for electron-beam pumping, and may be a milestone in the path to realizing next-generation ultraviolet light sources with great ecological and economic benefits.