Thin film high dielectric constant metal oxides prepared by reactive sputtering
Thin film high dielectric constant metal oxides prepared by reactive sputtering
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DOI：
10.1116/1.4757132
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发表时间：
2012-10
期刊：
影响因子：
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通讯作者：
S. Wright;C. P. Judge;M. J. Lee;D. F. Bowers;M. Dunbar;C. Wilson
中科院分区：
文献类型：
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作者：
S. Wright;C. P. Judge;M. J. Lee;D. F. Bowers;M. Dunbar;C. Wilson
已经研究了通过反应RF溅射生产的高介电常数、低损耗介电薄膜材料，其使用铌、钽、钛、铪和锆的氧化物以及这些氧化物与氧化铝的混合物用作集成电路中的电容器衬垫。发现最佳材料具有高击穿场和低漏电流，并且与相同值的Si3N4电容器相比，使用与半导体器件制造兼容的简单生产工艺，电容器面积减少>3倍。
High dielectric constant, low loss dielectric thin film materials produced by reactive RF sputtering have been investigated for use as capacitor dielectrics in integrated circuits, using oxides of niobium, tantalum, titanium, hafnium, and zirconium and mixtures of these with aluminum oxide. High breakdown fields and low leakage currents are found for the best materials and a reduction in capacitor area of a factor of >3 compared with Si3N4 capacitors of the same value, using a simple production process compatible with semiconductor device manufacturing.