Room temperature electroluminescence from the ZnO homojunction grown on an n+-Si substrate by metal–organic chemical vapor deposition
Room temperature electroluminescence from the ZnO homojunction grown on an n+-Si substrate by metal–organic chemical vapor deposition
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DOI：
10.1088/0268-1242/23/2/025014
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发表时间：
2008-01
影响因子：
1.9
通讯作者：
H. Liang;Q. Feng;Jingchang Sun;Jianze Zhao;J. Bian;Lizhong Hu;Heqiu Zhang;Yingmin Luo;Guotong Du
中科院分区：
文献类型：
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作者：
H. Liang;Q. Feng;Jingchang Sun;Jianze Zhao;J. Bian;Lizhong Hu;Heqiu Zhang;Yingmin Luo;Guotong Du
采用金属有机物化学气相沉积（MOCVD）技术在重掺磷的n+-Si衬底上生长ZnO薄膜。X射线光电子能谱（XPS）测量表明，在磷从n+-Si衬底扩散的过程中，形成了由磷掺杂ZnO层和未掺杂ZnO层组成的双层结构。该器件的电流-电压特性表现出明显的整流特性和低漏电流。观察到明显的缺陷相关的蓝白色电致发光，其来源被证实是从ZnO的p-n同质结。
ZnO film was grown on a heavily phosphor-doped n+-Si substrate by metal–organic chemical vapor deposition technology. X-ray photoelectron spectroscopy measurements indicate that a two-layer structure, comprised of a phosphor-doped ZnO layer and an un-doped ZnO layer, was formed during the diffusion process of phosphor from the n+-Si substrate. The current–voltage characteristic exhibited significant rectifying behavior with low-leakage current for this device. The distinct defect-related blue–white electroluminescence was observed, the origin of which was confirmed to be from the ZnO p–n homojunction.