Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance
Efficient Reduction of Graphite Oxide by Sodium Borohydride and Its Effect on Electrical Conductance
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DOI：
10.1002/adfm.200900167
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发表时间：
2009-06-23
影响因子：
19
通讯作者：
Lee, Young Hee
中科院分区：
文献类型：
--
作者：
Shin, Hyeon-Jin;Kim, Ki Kang;Lee, Young Hee
使用还原剂调制氧化石墨膜的导电性。结果表明，用硼氢化钠还原的氧化石墨薄膜的方块电阻比用肼还原的氧化石墨薄膜的方块电阻低得多。这归因于在N2 H4情况下C-N基团的形成，其可充当补偿还原的氧化石墨中的空穴载流子的供体。在NaBH 4还原的情况下，层间距离首先通过形成中间体硼氧化物络合物而略微扩大，然后通过逐渐去除羰基和羟基沿着硼氧化物络合物而收缩。所制造的包含NaBH 4还原的氧化石墨的导电膜显示出与分散的石墨烯的薄层电阻相当的薄层电阻。
The conductivity of graphite oxide films is modulated using reducing agents. It is found that the sheet resistance of graphite oxide film reduced using sodium borohydride (NaBH4) is much lower than that of films reduced using hydrazine (N2H4). This is attributed to the formation of C-N groups in the N2H4 case, which may act as donors compensating the hole carriers in reduced graphite oxide. In the case of NaBH4 reduction, the interlayer distance is first slightly expanded by the formation of intermediate boron oxide complexes and then contracted by the gradual removal of carbonyl and hydroxyl groups along with the boron oxide complexes. The fabricated conducting film comprising a NaBH4-reduced graphite oxide reveals a sheet resistance comparable to that of dispersed graphene.