Si homojunction structured near-infrared laser based on a phonon-assisted process
Si homojunction structured near-infrared laser based on a phonon-assisted process
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DOI：
10.1007/s00340-012-5053-2
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发表时间：
2012-06-01
影响因子：
2.1
通讯作者：
Yamamoto, N.
中科院分区：
文献类型：
--
作者：
Kawazoe, T.;Ohtsu, M.;Yamamoto, N.
利用修饰光子诱导声子辅助工艺，制备了几种在室温下连续振荡的近红外硅激光器件（波长约1300nm）。谐振腔由宽度为10 μ m，厚度为2 μ m的脊波导组成，具有两个劈裂面，谐振腔长度为250 ~ 1000 μ m，振荡阈值电流为50 ~ 60 mA。从光学辐射图的近场和远场图像中，我们观察到激光束的高指向性。激光振荡的阈值电流密度、振荡过程中TE极化与TM极化的功率比、60 mA电流下的光输出功率和外部差分量子效率的典型值分别为1.1 ~ 2.0 kA/cm(2)、8:1、50 μ W和1%。
We fabricated several near-infrared Si laser devices (wavelength similar to 1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 mu m and a thickness of 2 mu m, with two cleaved facets, and the resonator lengths were 250-1000 mu m. The oscillation threshold currents of these Si lasers were 50-60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1-2.0 kA/cm(2), 8:1, 50 mu W, and 1 %, respectively.