A Survey of Phase Change Memory Systems
A Survey of Phase Change Memory Systems
复制标题
相变存储系统综述
DOI：
10.1007/s11390-015-1509-2
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发表时间：
2015-01
影响因子：
0.7
通讯作者：
Ninghui Sun
中科院分区：
文献类型：
--
作者：
Fei Xia;Dejun Jiang;Jin Xiong;Ninghui Sun
As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.
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DOI：
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期刊：
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影响因子：
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DOI：
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