Advanced granular-type perpendicular recording media
Advanced granular-type perpendicular recording media
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先进的粒状垂直记录介质
DOI：
10.1016/j.jmmm.2008.07.039
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发表时间：
2008
影响因子：
2.7
通讯作者：
S. Saito
中科院分区：
文献类型：
--
作者：
M. Takahashi;S. Saito
我们介绍了我们最近的实验结果，为目前使用的垂直记录介质的三个阻挡层，记录层（RL：记录），软磁底层（SUL：磁通量写入路径），和一个中间层（NMIL：RL和RL和SUL之间的分离层的底层）。对于NMIL，单轴晶体对称性是抑制颗粒型RL中磁性颗粒的变体生长的基本要求。从这一点来看，发现具有纤锌矿结构的AlN和具有伪六方晶系结构（pseudo-hcp结构，这意味着具有堆垛层错的fcc结构）的材料是有效的。对于SUL，无序hcp CoIr与负Kuwere发现，很好地抑制尖峰噪声和磁道擦除，由于在写和形成的尼尔壁，而不是布洛赫壁在SUL的返回磁轭下的磁通量的广泛分布。对于RL，具有非相干切换模式的正/负Ku堆叠介质被发现是有效的，以解决最近的可写性问题，高KuRL材料具有高热稳定性。应用所有这些项目，具有“CoPtCr-氧化物/CoIr-氧化物/CoIr/伪hcp介电层/衬底”的堆叠结构的先进介质概念从（1）具有高Ku材料的RL的切换场减小、（2）常规非晶SUL自由、以及（3）常规NMIL自由的观点来看是非常有希望的。
We introduce our recent experimental results for three blocked layers for currently used perpendicular recording media; a recording layer (RL: for recording), a soft magnetic underlayer (SUL: magnetic flux path in writing), and a nonmagnetic intermediate layer (NMIL: underlayer of RL and separation layer between RL and SUL). For the NMIL, uniaxial crystallographic symmetry is an essential requirement for suppression of variant growth of magnetic grains in granular-type RL. From this view point, AlN with wurtzite structure and materials with pseudo-hcp structure, which means fcc structure with stacking faults, were found to be effective. For the SUL, disordered hcp CoIr with negative Kuwere found to well suppress both spike noise and track erasure due to a wide distribution of magnetic flux under the return yoke in writing and formation of a Neel wall instead of a Bloch wall in the SUL. For the RL, positive-/negative-Kustacked media with incoherent switching mode was found to be effective in order to solve the recent write-ability problem for high KuRL material with high thermal stability. Applying all these items, an advanced medium concept with the stacking structure of “CoPtCr-oxide/CoIr-oxide/CoIr/pseudo-hcp nonmagnetic layer/substrate” is very promising from the view point of (1) switching field reduction of a RL with high Kumaterial, (2) conventional amorphous SUL free, and (3) conventional NMIL free.
影响因子：
2.1
作者：
Wang, JP;Shen, WK;Bai, JM
通讯作者：
Bai, JM
影响因子：
3.2
作者：
Hashimoto, Atsushi;Saito, Shin;Takahashi, Migaku
通讯作者：
Takahashi, Migaku