Multi-level active gate driver for SiC MOSFETs
Multi-level active gate driver for SiC MOSFETs
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DOI：
10.1109/ecce.2017.8096860
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发表时间：
2017-10
期刊：
影响因子：
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通讯作者：
H. Dymond;Dawei Liu;Jianjing Wang;Jeremy J. O. Dalton;B. Stark
中科院分区：
文献类型：
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作者：
H. Dymond;Dawei Liu;Jianjing Wang;Jeremy J. O. Dalton;B. Stark
有源栅极驱动已被证明在功率电子电路中提供降低的电路损耗和改善的开关波形质量。集成有源栅极驱动器具有150 ps的分辨率，先前已被证明在GaN基转换器中提供预期的好处。然而，低电压、高速晶体管的使用将其输出电压范围限制在5 V，对于许多新兴的SiC和GaN器件来说太低。本文介绍了一种由两个市售的常规驱动器串联而成的改进型5V、100 ps分辨率有源驱动器。第一传统驱动器将栅极电压从负保持电压提升到刚好低于栅极阈值电压，有源驱动器在栅极阈值附近执行有源高分辨率控制，之后第二传统驱动器提升栅极电压以达到最佳Rdson值。该驱动器在900 V SiC MOSFET上进行了演示，该MOSFET需要15 V导通栅极电压才能实现最佳Rdson。该器件在100 kHz、非同步、1：10、300 W升压转换器中以50 V/ns的速度切换，功率器件切换600 V和5 A。它示出的栅极电压可以在100 ps的规模上的影响，并且可以实现快速功率波形的有意义的变化。
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC and GaN devices. This paper introduces a series connection of two commercially available conventional drivers and an improved 5 V, 100 ps resolution active driver. The first conventional driver lifts the gate voltage from the negative hold-off voltage to just below the gate threshold voltage, the active driver performs active high-resolution control around the gate threshold, after which the second conventional driver raises the gate voltage to reach optimal Rdson values. This driver is demonstrated on a 900-V SiC MOSFET that requires a 15 V onstate gate voltage to achieve optimum Rdson. The device is switched at 50 V/ns in a 100-kHz, non-synchronous, 1:10, 300-W boost converter, with the power device switching 600 V and 5 A. It is shown that the gate voltage can be affected on a 100 ps scale, and that meaningful changes to fast power waveforms can be achieved.