Radiation hardness of a single crystal CVD diamond detector for MeV energy protons
Radiation hardness of a single crystal CVD diamond detector for MeV energy protons
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DOI：
10.1016/j.nima.2014.12.036
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发表时间：
2015-06-01
影响因子：
1.4
通讯作者：
Shikata, Shinichi
中科院分区：
文献类型：
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作者：
Sato, Yuki;Shimaoka, Takehiro;Shikata, Shinichi
我们使用化学气相沉积法生长的单晶金刚石制造了粒子探测器。使用 3 MeV 质子测量金刚石探测器输出脉冲高度的辐射剂量依赖性。由于金刚石晶体内部的偏振效应，当计数率为 1.6-8.9 kcps 时，金刚石探测器输出信号的脉冲高度随着照射量的增加而减小。可以通过施加反向偏压来消除偏振效应，从而恢复脉冲高度。此外，还将 MeV 能量质子的辐射硬度性能与硅表面势垒探测器的辐射硬度性能进行了比较。 (C) 2014 Elsevier B.V. 保留所有权利。
We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6-8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector. (C) 2014 Elsevier B.V. All rights reserved.