A 700-V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer
A 700-V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer
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具有 N 型顶层的 700V 结隔离三重 RESURF LDMOS
DOI：
10.1109/led.2014.2326185
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发表时间：
2014-07-01
影响因子：
4.9
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Qiao, Ming;Li, Yanfei;Zhang, Bo
本文提出了一种结隔离三重RESURF（JITR）LDMOS，它具有高击穿电压（BV）和低比导通电阻（R-on，R-sp）。与传统的三重RESURF（CTR）LDMOS结构相比，该结构在N阱表面增加了一层高掺杂的N型顶层（N-top），从而在导通状态下提供了一条低导通电阻的表面导电通路。实验结果表明，该器件具有较低的导通电阻、导通电阻和730 V以上的BV。JITR LDMOS的R-on、R-sp比CTR LDMOS的R-on、R-sp低15%~ 24.3%。具有水平N顶层和P埋层的JITR LDMOS类似于超级结（SJ）LDMOS。与已报道的SJ LDMOS相比，JITR LDMOS的SJ层沿纵向而不是宽度方向形成，并且与已发布的SJ LDMOS相比，所提出的JITR LDMOS具有几乎最高的BV和高功率品质因数（FOM，定义为BV 2/R-on，R-sp）。
A junction-isolated triple RESURF (JITR) LDMOS with high breakdown voltage (BV) and low specific on-resistance (R-on,R-sp) is proposed in this letter. Compared with the conventional triple RESURF (CTR) LDMOS, the new structure features a highly doped n-type top (N-top) layer at the surface of N-well, providing a low on-resistance surface conduction path in the on-state. The experimental result demonstrates that low R-on,R-sp and high BV of above 730 V are achieved by the JITR LDMOS. R-on,R-sp of the JITR LDMOS is about 15%-24.3% lower than that of the CTR LDMOS. The JITR LDMOS with horizontal N-top layer and P-buried layer resembles a super junction (SJ) LDMOS. Compared with the reported SJ LDMOS, the SJ layer of JITR LDMOS is formed in the longitudinal direction instead of the width direction, and the proposed JITR LDMOS exhibits almost the highest BV and high power figure of merit (FOM, defined as BV2/R-on,R-sp) in comparison to the published SJ LDMOS.