Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis
Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis
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DOI：
10.1021/acs.cgd.2c01506
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发表时间：
2023-05-16
影响因子：
3.8
通讯作者：
Arafin, Shamsul
中科院分区：
文献类型：
--
作者：
Hasan, Syed M. N.;You, Weicheng;Arafin, Shamsul
本工作采用等离子体辅助分子束外延技术在Ga极性GaN/蓝宝石衬底上选择性区域外延生长GaN纳米结构。我们展示了三种类型的纳米结构，纳米线，纳米鳍，和纳米环，在蓝宝石GaN模板，以及investigatethe控制它们的形态，侧壁加顶面的取向的方法。这项研究有助于促进理解选择性区域外延定义复杂的III-氮化物纳米结构，构成了在纳米技术和纳米科学领域的研究和开发的活跃领域。这项工作提出了选择性区域外延GaN nanostructures生长在Ga极性GaN/蓝宝石衬底上的等离子体辅助分子束外延。我们展示了三种类型的纳米结构，包括nanowires，nanofins，和nanorings上的GaN蓝宝石模板以及调查的方式来控制他们的形态，和取向的侧壁加顶面。在选择性区域外延过程中采用了一系列生长条件，包括低到高的Ga通量，以开发具有均匀几何形状和近垂直和光滑侧壁的纳米结构。使用适当的生长条件和掩模图案化方向，非极性纳米鳍网格包含两个/任何一个m-/a-平面与低至260 nm的鳍宽度和多达六个互连被证明与光滑的侧壁。基于这些实验结果，我们发展了一个生长模型，考虑到不同的侧壁刻面和取向。该模型较好地概括了实验结果，并解释了纳米结构的生长条件。这项研究有助于促进对选择性区域外延的理解，以定义构成纳米技术和纳米科学领域研究和发展的活跃领域的复杂III族氮化物纳米结构。
This work presents the selectivearea epitaxy of GaN nanostructuresgrown on Ga-polar GaN/sapphire substrates by plasma-assisted molecularbeam epitaxy. We demonstrate three types of nanostructures, nanowires,nanofins, and nanorings, on GaN-on-sapphire templates as well as investigatethe ways of controlling their morphology, and orientation of sidewallplus top facets. This study serves to advance the understanding ofselective area epitaxy for defining complex III-nitride nanostructuresthat constitute an active area of research and development in thefields of nanotechnology and nanoscience.This work presents the selective area epitaxy of GaNnanostructuresgrown on Ga-polar GaN/sapphire substrates by plasma-assisted molecularbeam epitaxy. We demonstrate three types of nanostructures, includingnanowires, nanofins, and nanorings on GaN-on-sapphire templates aswell as investigate the ways of controlling their morphology, andorientation of sidewall plus top facets. A range of growth conditionsincluding low to high Ga flux were employed during selective areaepitaxy to develop these nanostructures with homogenous geometry andnear vertical and smooth sidewalls. Using appropriate growth conditionsand mask patterning orientations, nonpolar nanofin grids containingboth/either m-/a-planes with aslow as 260 nm fin width and up to six interconnects are demonstratedwith smooth sidewalls. Based on these experimental results, we developeda growth model that takes different sidewall facets and orientationsinto account. The model generalizes the experimental results welland explains the growth conditions for the nanostructures. This studyserves to advance the understanding of selective area epitaxy fordefining complex III-nitride nanostructures that constitute an activearea of research and development in the fields of nanotechnology andnanoscience.