Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells
Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells
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DOI：
10.1143/jjap.39.413
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发表时间：
2000-02-01
期刊：
影响因子：
--
通讯作者：
Akasaki, I
中科院分区：
文献类型：
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作者：
Takeuchi, T;Amano, H;Akasaki, I
我们计算了纤锌矿应变Ga0.5In0.1N/GaN异质结构中压电场的晶体取向依赖性。在GaN上相干生长的（0001）取向双轴应变Ga0.5In0.1N层可产生0.7 MV/cm的最高纵向压电场。相反，从（0001）开始沿39度或90度角方向生长的应变层没有产生纵向压电场。例如，具有这些角的高对称面为（11(2)/ bar4）和（10(1)/ bar2）（39度），（11(2)/ bar0）和（10(1)/ bar0）（90度）。我们还计算了3 nm应变Ga0.5In0.1N/GaN量子阱中晶体取向对跃迁概率的依赖关系，结果表明，这些非（0001）取向的跃迁概率比（0001）取向的跃迁概率大2.3倍。我们认为，通过控制晶体取向可以获得高性能的应变氮基光学器件。
We calculated the crystal orientation dependence of piezoelectric fields in wurtzite strained Ga0.5In0.1N/GaN heterostructures. The highest longitudinal piezoelectric field of 0.7 MV/cm can be generated in (0001)-oriented biaxial-strained Ga0.5In0.1N layer coherently grown on GaN. On the contrary, no longitudinal piezoelectric field is induced in strained layers grown along orientations at an off angle of 39 degrees or 90 degrees from (0001). The high symmetry planes with these angles are, for instance, (11(2)over bar4) and (10(1)over bar2) for 39 degrees, and (11(2)over bar0) and (10(1)over bar0) for 90 degrees. We also calculated the crystal orientation dependence of the transition probability in a 3-nm strained Ga0.5In0.1N/GaN quantum well, which indicated that the transition probability with these non(0001) orientations becomes 2.3 times larger than that with the (0001) orientation. We conclude that high-performance strained nitride-based optical devices can be obtained by control of the crystal orientation.