Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation
Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation
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通过离子注入和闪光灯退火生产的重度 Ga 掺杂锗层：结构和电激活
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
W. Skorupa
中科院分区：
文献类型：
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作者：
V. Heera;A. Mücklich;M. Posselt;M. Voelskow;C. Wündisch;B. Schmidt;R. Skrotzki;K. Heinig;T. Herrmannsdörfer;W. Skorupa
通过 100 keV Ga 注入和随后在 700 至 900°C 温度范围内进行 3 ms 的闪光灯退火来制造重 p 型掺杂 Ge 层。为了进行比较，一些样品在快速热处理机中退火 60 秒。选择 2×1015、6×1015 和 2×1016 cm−2 的 Ga 注量是为了实现 Ga 峰值浓度，范围从略低于平衡固溶度极限 4.9×1020 cm−3 的值到 3.5×1021 cm−3，对应于约 8 at 的最大 Ga 含量。 %。通过卢瑟福背散射光谱法结合离子沟道、截面电子显微镜和二次离子质谱研究了掺杂层的结构和Ga分布。进行温度相关的霍尔效应测量以确定 Ga 掺杂 Ge 层的电性能。结果表明，通过闪光灯退火，可以完全避免 Ga 扩散到体中，并且 Ga 因向外扩散而损失...
Heavily p-type doped Ge layers were fabricated by 100 keV Ga implantation and subsequent flash lamp annealing for 3 ms in the temperature range between 700 and 900 °C. For comparison, some samples were annealed in a rapid thermal processor for 60 s. Ga fluences of 2×1015, 6×1015, and 2×1016 cm−2 were chosen in order to achieve Ga peak concentrations ranging from values slightly below the equilibrium solid solubility limit of 4.9×1020 cm−3 up to 3.5×1021 cm−3 which corresponds to a maximum Ga content of about 8 at. %. The structure of the doped layer and the Ga distribution were investigated by Rutherford backscattering spectrometry in combination with ion channeling, cross-sectional electron microscopy, and secondary ion mass spectrometry. Temperature dependent Hall effect measurements were carried out in order to determine the electrical properties of the Ga-doped Ge layers. It is shown that by flash lamp annealing Ga diffusion into the bulk can be completely avoided and the Ga loss by outdiffusion from ...