The Applications of Citric Acid/Hydrogen Peroxide Etching Solutions in the Processing of Pseudomorphic MODFETs
The Applications of Citric Acid/Hydrogen Peroxide Etching Solutions in the Processing of Pseudomorphic MODFETs
复制标题
DOI：
10.1149/1.2054845
复制
发表时间：
1994-04
影响因子：
3.9
通讯作者：
B. Mao;J. Nielsen;R. Friedman;G. Y. Lee
中科院分区：
文献类型：
--
作者：
B. Mao;J. Nielsen;R. Friedman;G. Y. Lee
研究了GaAs和Al 0.28 Ga 0.72 As在柠檬酸/双氧水腐蚀溶液中的腐蚀特性。结果表明，通过改变溶液的浓度，可以将选择性（GaAs蚀刻速率：Al 0.28 Ga 0.72 As蚀刻速率）从超过80:1改变为1:4 .4的反向选择性；砷化镓蚀刻速率也可以从超过4000 A/min到小于150 A/min变化。然而，高选择性工艺始终显示出较高的砷化镓蚀刻率
The etching characteristics of GaAs and Al 0.28 Ga 0.72 As in citric acid/hydrogen peroxide etching solution were studied. The etch rate and the selectivity were measured over a wide concentration range from room temperature down to 0 o C. The results show that by changing the concentration of the solution we can vary the selectivity (GaAs etch rate: Al 0.28 Ga 0.72 As etch rate) from over 80:1 to reverse selectivity of 1:1.4; the GaAs etch rate can also be varied from over 4000 A/min to less than 150 A/min. However, high selectivity process consistently shows high GaAs etch rate