Graphene nano-ribbon electronics
Graphene nano-ribbon electronics
复制标题
DOI：
10.1016/j.physe.2007.06.020
复制
发表时间：
2007-12-01
影响因子：
3.3
通讯作者：
Avouris, Phaedon
中科院分区：
文献类型：
--
作者：
Chen, Zhihong;Lin, Yu-Ming;Avouris, Phaedon
我们制作了石墨烯纳米带场效应晶体管器件，并研究了它们的电学性能作为带宽度的函数。我们的实验表明，电阻率的带状增加，其宽度减小，表明边缘状态的影响。温度相关的测量分析表明，在窄带有限的量子限制间隙开口。发现石墨烯带器件在低频下的电流噪声主要由1/f噪声决定。(c)2007 Elsevier B. V.保留所有权利。
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. (c) 2007 Elsevier B.V. All rights reserved.