Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
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DOI：
10.7567/jjap.52.08je20
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发表时间：
2013-08-01
影响因子：
1.5
通讯作者：
Taylor, Robert A.
中科院分区：
文献类型：
--
作者：
Chan, Christopher C. S.;Zhuang, YiDing;Taylor, Robert A.
采用纳米压印光刻技术在蓝色InGaN/GaN单量子阱（QW）LED晶片上制备纳米棒阵列。以2 μ m的节距制造纳米棒的规则六边形晶格，在纳米棒中产生直径类似于400 nm的单量子盘。利用时间积分显微光致发光技术研究了4.2K下自顶向下处理的单根纳米棒的发光特性。显微光致发光图研究了光致发光发射的空间隔离，显示了纳米棒之间良好的对比度。依赖于激发功率的研究表明，未处理的晶片和单个纳米棒的量子限制斯塔克效应的筛选。在低激发功率下，在光致发光光谱中出现尖锐峰的局部状态是可见的，密度为每纳米棒约四个峰。(C)2013日本应用物理学会
Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. A regular hexagonal lattice of nanorods was made at a pitch of 2 mu m producing single quantum disks in the nanorods with diameter of similar to 400 nm. Time integrated micro-photoluminescence was performed to investigate the emission properties of top down processed single nanorods at 4.2 K. Micro-photoluminescence maps were made to study the spatial isolation of the photoluminescence emission, showing a good contrast ratio between nanorods. Excitation power dependent studies show screening of the quantum confined Stark effect for both the unprocessed wafer and the single nanorod. At low excitation powers, localised states appearing as sharp peaks in the photoluminescence spectrum were visible with a density of approximately four peaks per nanorod. (C) 2013 The Japan Society of Applied Physics