All-electric all-semiconductor spin field-effect transistors
All-electric all-semiconductor spin field-effect transistors
复制标题
DOI：
10.1038/nnano.2014.296
复制
发表时间：
2015-01-01
影响因子：
38.3
通讯作者：
Chen, Tse-Ming
中科院分区：
文献类型：
--
作者：
Chuang, Pojen;Ho, Sheng-Chin;Chen, Tse-Ming
Datta和Das（1）设想的自旋场效应晶体管打开了自旋信息处理的大门（2，3）。尽管半导体中的电子自旋的相干操纵现在是可能的（4-8），但用于信息处理的功能性自旋场效应晶体管的实现尚未实现，这是由于几个基本挑战，例如由于电阻失配导致的低自旋注入效率（9）、自旋弛豫和自旋旋进角的扩展。因此，已经提出了替代的自旋晶体管设计（10，11），但是这些设计不同于场效应晶体管概念，并且需要使用光学或磁性元件，这给集成电路的结合带来了困难。在这里，我们提出了一个全电和全半导体自旋场效应晶体管，其中这些障碍是通过使用两个量子点接触作为自旋注入器和探测器克服。独特的自旋-轨道耦合工程架构被用于量子点接触和中央半导体沟道，以实现以纯电气方式对电子自旋的完全控制（自旋注入、操纵和检测）。这种器件与大规模集成兼容，并有望成为未来用于信息处理的自旋电子器件。
The spin field-effect transistor envisioned by Datta and Das(1) opens a gateway to spin information processing(2,3). Although the coherent manipulation of electron spins in semiconductors is now possible(4-8), the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch(9), spin relaxation and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed(10,11), but these differ from the field-effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for incorporation into integrated circuits. Here, we present an all-electric and all-semiconductor spin field-effect transistor in which these obstacles are overcome by using two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins (spin injection, manipulation and detection) in a purely electrical manner. Such a device is compatible with large-scale integration and holds promise for future spintronic devices for information processing.